sot-23-6l plastic-encapsulate mosfets CJL3407 p-channel enhancement mode field effect transistor general description the cj3407 uses advanced trench tec hnology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. marking: r7 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -4.1 a power dissipation p d 350 mw thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -23-6l z z 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =20v, v ds = 0v 100 na v gs =-10v, i d =-4.1a 60 m ? drain-source on-resistance (note 1) r ds(on) v gs =-4.5v, i d =-3a 87 m ? forward tranconductance (note 1) g fs v ds =-5v, i d =-4a 5.5 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v diode forward voltage (note 1) v sd i s =-1a,v gs =0v -1 v dynamic characteristics (note 2) input capacitance c iss 700 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 75 pf switching characteristics (note 2) turn-on delay time t d(on) 8.6 ns turn-on rise time t r 5.0 ns turn-off delay time t d(off) 28.2 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ? ,r gen =3 ? 13.5 ns notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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